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FDN359AN Datasheet, Fairchild Semiconductor

FDN359AN mosfet equivalent, n-channel mosfet.

FDN359AN Avg. rating / M : 1.0 rating-11

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FDN359AN Datasheet

Features and benefits

2.7 A, 30 V. RDS(ON) = 0.046 Ω @ VGS = 10 V RDS(ON) = 0.060 Ω @ VGS = 4.5 V. Very fast switching. Low gate charge (5nC typical). High power version of industry standard S.

Application

where low in-line power loss and fast switching are required. Features 2.7 A, 30 V. RDS(ON) = 0.046 Ω @ VGS = 10 V RDS(.

Description

This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suite.

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FDN359AN Page 1 FDN359AN Page 2 FDN359AN Page 3

TAGS

FDN359AN
N-Channel
MOSFET
FDN359BN
FDN352AP
FDN357N
Fairchild Semiconductor

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